Wideband SiGe BiCMOS transimpedance amplifier for 20 Gb/s optical links

An 8 – 18 GHz Wideband SiGe BiCMOS Low Noise Amplifier

In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...

BiCMOS variable gain transimpedance amplifier for automotive applications

A new BiCMOS variable gain transimpedance amplifier with a large area integrated photodiode for automotive applications is presented. Through careful control of the input pole position and the frequency response of the core amplifier, the bandwidth of the transimpedance amplifier varies from 112 to 300 MHz when its gain changes from 14.2 kV to 400 V. The proposed circuit configuration maintains...

High-Performance CMOS and BiCMOS Transimpedance Preamplifiers for Optical Communications

High-performance transimpedance preamplifiers (TIAs) based on new CMOS common-gate (CG) and BiCMOS common-base (CB) schemes have been designed for optical communications. The new design approach potentially allows the efficient employment of circuit techniques to optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8μm process parameters, simulated performance ...

Wideband CMOS Transimpedance Amplifier Design Using Transformer-Peaking Technique

SiGe HBT wideband amplifier for millimeter wave applications

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz f t SiGe BiCMOS technology. Die size was 0.7×0.73 mm. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the hi...